Taking the High Pressure Physical Properties Institute as a research platform, through teamwork and combining its own professional research directions, it has formed its own characteristics and advantages, and finally condensed into the following research directions:

1. Semi-metallic material design and research:

Design this kind of semi-metallic materials through first principles or ab initio calculation methods, and explore their related polarized electronic properties, and provide a theoretical basis for the application of this kind of materials in spintronic devices.

2. Research and improvement of material magneto-caloric properties:

The material will undergo corresponding entropy changes under the action of an external magnetic field, and the Monte Carlo method combined with the first principles is used to design entropy change materials with different magnetic fields and temperature coupling environments, and then design ideal magnetic refrigeration materials that do not generate greenhouse gases. And it is widely used in refrigeration fields such as air conditioners and refrigerators.

3. Design and improvement of magnetron shape memory alloy:

The Monte Carlo method combined with molecular dynamics simulation is used to design a new type of alloy with large strain, high Curie temperature and higher martensitic transformation temperature, which provides a scientific basis for the application of this type of material in the field of intelligent sensing.

4. Material table and interface properties research: Spintronic devices are usually made of two-dimensional thin-film materials, and the electronic and magnetic properties of two-dimensional thin-film materials are usually changed due to the relaxation phenomenon of bulk materials. We will use molecular dynamics methods to study the surface and interface characteristics of two-dimensional thin film materials, and use doping methods to improve the surface and interface characteristics of the material.

5. Spin semiconductor material design:

Spin semiconductors use the spin characteristics of electrons as a carrier, and a magnetic field can be used to control the polarization and transport of the spin current. Since the polarization and transport of the electron spin require very little current to control, and the spin reversal is completed instantaneously, the spin semiconductor device has extremely low power consumption and extremely fast response time, and is the next generation memory The most promising alternative technology. We will design spin materials with semiconductor properties through first principles and ab initio algorithms.

6. Topological insulator design and improvement:

Topological insulator is a new quantum state of matter. The electronic state of this state of matter is an insulator with energy gap, and its surface is a metal state without energy gap. The surface metal state of a topological insulator is completely determined by the topological structure of the bulk electronic state of the material, and has nothing to do with the specific structure of the surface. And the surface of such materials is always metallic. Therefore, we can use the spin of electrons to transmit information, so this type of material has huge potential application value in the development of electronic technology in the future. However, finding a strong topological insulator material with a large enough energy gap and chemical stability has become an important focus and difficulty of people's attention.